공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-09-28
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
VishaySQ3410EV-T1_GE3
SQ3410EV Series 30 V 8 A Surface Mount Automotive N-Channel Mosfet - TSOP-6
Diodes Inc.DMG6402LVT-7
Mosfet, N-Ch, 30V, 6A, Tsot-26 Rohs Compliant: Yes |Diodes Inc. DMG6402LVT-7
Diodes Inc.DMN3026LVT-7
1.2W(Ta) 20V 2V@ 250¦ÌA 12.5nC@ 10 V 1N 30V 23m¦¸@ 6.5A,10V 6.6A 643pF@15V TSOT-23-6
설명
유통업체에서 제공한 Infineon IRLTS6342TRPBF에 대한 설명입니다.
TAPE AND REEL // MOSFET, 30V, 8.3A, 17.5 mOhm, 2.5V drive capable, TSOP-6
30V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single N-Channel 30 V 17.5 mOhm 11 nC HEXFET® Power Mosfet - TSOP-6
MOSFET Operating temperature: -55...+150 °C Housing type: TSOP-6 Polarity: N Power dissipation: 2.0 W
Trans MOSFET N-CH 30V 8.3A 6-Pin TSOP T/R
MOSFET, N-CH, 30V, 8.3A, 6TSOP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-23-6
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)8.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance17.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.01 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-400 mV
Number of Channels1
Number of Elements1
On-State Resistance17.5 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max17.5 mΩ
Recovery Time20 ns
Resistance17.5 MΩ
Rise Time11 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time5.4 ns
Dimensions
Height1.45 mm
Length3 mm
Width1.75 mm