공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 3 months ago)
관련 부품
VishaySI3407DV-T1-GE3
Si3407DV Series P-Channel 20 V 0.024 Ohm 4.2 W Surface Mount Mosfet - TSOP-6
InfineonBSL207SPL6327HTSA1
MOSFET P-CH 20V 6A TSOP-6 / P-Channel 20 V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6
InfineonBSL202SNH6327XTSA1
Mosfet, N-Ch, 20V, 150Deg C, 2W Rohs Compliant: Yes |Infineon Technologies BSL202SNH6327XTSA1
설명
유통업체에서 제공한 Infineon IRLTS2242TRPBF에 대한 설명입니다.
-20V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS
Infineon SCT
Single P-Channel 20 V 55 mOhm 12 nC HEXFET® Power Mosfet - TSOP-6
Power MOSFET, P Channel, 20 V, 6.9 A, 0.026 ohm, TSOP, Surface Mount
MOSFET Operating temperature: -55...175 °C Housing type: TSOP-6 Polarity: P Variants: Enhancement mode Power dissipation: 2 W
Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:6.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:2W; No. Of Pins:6Pins Rohs Compliant: Yes |Infineon IRLTS2242TRPBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTSOP
Contact PlatingTin
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)6.9 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance905 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance-32 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max32 mΩ
Resistance55 MΩ
Rise Time18 ns
Schedule B8541290080
Threshold Voltage-400 mV
Turn-Off Delay Time81 ns
Turn-On Delay Time5.8 ns
Dimensions
Height1.45 mm
Length3 mm
Width1.75 mm