공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-02-02
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
관련 부품
InfineonIRLS3813PBF
MOSFET N-CH 30V 160A D2PAK / N-Channel 30 V 160A (Tc) 195W (Tc) Surface Mount D2PAK
InfineonAUIRF2903ZS
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonAUIRF1324S
Automotive Q101 24V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
VishaySUM90N03-2M2P-E3
SUM90N03-2M2P-E3 N-CHANNEL MOSFET TRANSISTOR, 90 A, 30 V, 2+TAB-PIN TO-263
설명
유통업체에서 제공한 Infineon IRLS3813TRLPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 30 V 1.95 mOhm 55 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 30V 247A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 160A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free; RoHS Compliant
Mosfet, N-Ch, 30V, 160A, To-263Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0016Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V; Power Rohs Compliant: Yes |Infineon Technologies IRLS3813TRLPBF
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)160 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance1.95 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time102 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance8.02 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation195 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.95 mΩ
Package Quantity800
PackagingTape & Reel (TR)
Power Dissipation195 W
Rds On Max1.95 mΩ
Rise Time202 ns
Schedule B8541290080
Turn-Off Delay Time33 ns
Turn-On Delay Time32 ns
Dimensions
Height5.084 mm