공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-09
Lifecycle StatusObsolete (Last Updated: 9 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRLR7843TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V
InfineonIRLR7843PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 161A;D-Pak (TO-252AA);VF 1V
InfineonIRLR7843TRLPBF
MOSFET N-CH 30V 161A DPAK N-Channel 30 V 161A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
설명
유통업체에서 제공한 Infineon IRLR7833TRLPBF에 대한 설명입니다.
MOSFET N-CH 30V 140A DPAK N-Channel 30 V 140A (Tc) 140W (Tc) Surface Mount TO-252AA (DPAK)
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.6Milliohms;ID 140A;D-Pak (TO-252AA);VF 1V
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
140W(Tc) 20V 2.3V@ 250µA 50nC@ 4.5 V 1individualNChannel 30V 4.5mΩ@ 15A,10V 140A 4.01nF@15V DPAK，TO-252AA SMD mount 6.5mm*6.22mm*2.3mm
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):4.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating99 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vds)30 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.01 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.5 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation140 W
Rds On Max4.5 mΩ
Rise Time6.9 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책