공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-10-07
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2012-06-26
LTD Date2012-09-26
관련 부품
onsemiNTD50N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns
onsemiNTD50N03RT4
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
onsemiNTD4865NT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.5A Ta 44A Tc 44A 1.92W 19ns
설명
유통업체에서 제공한 Infineon IRLR3714ZTRPBF에 대한 설명입니다.
MOSFET, 20V, 37A, 15 MOHM, 4.7 NC QG, LOGIC LEVEL, D-PAK
Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET N-CH 20V 37A DPAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:37A; On Resistance, Rds(on):15mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
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- Infineon Technologies
- INF
- INFINEO
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- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- INFINEON/SIEMENS
- LNFINEON
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- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time4.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance560 pF
Max Operating Temperature175 °C
Max Power Dissipation35 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation35 W
Rds On Max15 mΩ
Rise Time7.6 ns
Turn-Off Delay Time9.2 ns
Turn-On Delay Time5.4 ns