Infineon IRLMS2002PBF

Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP

Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Compliant Reverse 3 mm Cut Tape No SVHC 45 mΩ 1.2 V 6

MOSFET, N, LOGIC, MICRO-6; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:6.5A; Resistance, Rds On:0.03ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:1.2V; Case Style:Micro6; ;RoHS Compliant: Yes

MOSFET, N, LOGIC, MICRO-6; Transistor Polarity:N Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):30mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.2V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:µSOIC; No. of Pins:6; Capacitance Ciss Typ:1310pF; Charge Qrr @ Tj = 25°C Typ:15nC; Current Id Max:6.5A; Current Temperature:25°C; External Depth:3.00mm; External Length / Height:1.45mm; External Width:3.00mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; N-channel Gate Charge:15nC; On State Resistance @ Vgs = 2.5V:45mohm; On State Resistance @ Vgs = 4.5V:30mohm; Package / Case:Micro6; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:20A; Reverse Recovery Time trr Typ:11ns; SMD Marking:2G; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:0.6V