공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1995-07-01
Lifecycle StatusProduction (Last Updated: 9 months ago)
관련 부품
InfineonIRLML5103TRPBF
INFINEON IRLML5103PBF MOSFET Transistor, P Channel, 610 mA, -30 V, 600 mohm, -10 V, -1 V
InfineonIRLML5103GTRPBF
-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
설명
유통업체에서 제공한 Infineon IRLML2803TRPBF에 대한 설명입니다.
MOSFET N-CH 30V 1.2A SOT23 N-Channel 30 V 1.2A (Ta) 540mW (Ta) Surface Mount Micro3™/SOT-23
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.25Ohm;ID 1.2A;Micro3;PD 540mW;VGS +/-20V
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Power MOSFET, N Channel, 30 V, 850 mA, 0.25 ohm, SOT-23, Surface Mount
Infineon N-Channel HEXFET MOSFET, Vds=30V, 1.2A, SOT-23, SMD, 3-Pin
N Channel Mosfet, 30V, 1.2A, Sot-23, Ful; |Infineon Technologies IRLML2803TRPBF.
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 540 mW
HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N REEL 3K; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:0.85A; Resistance, Rds On:0.3ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:7.3A; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.4W; Power, Pd:0.4W; Quantity, Reel:3000; SMD Marking:1B; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Temperature, Tj Min:-55°C; Transistors, No. of:1; Voltage, Vds Max:30V; Voltage, Vgs th Max:2.5V; Width, External:3.05mm; Width, Tape:8mm
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기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.2 A
Current12 A
Current Rating1.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vds)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time1.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance85 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation280 mW
Manufacturer Package IdentifierMicro3
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
On-State Resistance250 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation340 mW
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time4 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time9 ns
Turn-On Delay Time3.9 ns
Voltage30 V
Voltage Rating (DC)30 V
Dimensions
Height1.12 mm
Length3.0226 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
규정 준수 정책