가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRLHM620TRPBF | 3,228 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLHM620TRPBF | 4,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRLHM620TRPBF | 46,953 | 11h | |||||||||
| DigiKey | IRLHM620TRPBFCT-ND | 7,008 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLHM620TRPBF | 7,988 | 1 |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
InfineonIRLHM630TRPBF
INFINEON IRLHM630TRPBF MOSFET Transistor, N Channel, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
InfineonIRLHS6276TRPBF
20V Dual N-Channel Logic Level HEXFET Power MOSFET in a PQFN 2mm x 2mm Lead Free package
InfineonIRFH5255TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRLHM620TRPBF에 대한 설명입니다.
Single N-Channel 20 V 3.5 mOhm 52 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
20V Single N-Channel HEXFET Power MOSFET in a PQFN 3.3 by 3.3 package, PG-TSDSON-8, RoHS
Infineon SCT
Power MOSFET, N Channel, 20 V, 40 A, 0.0022 ohm, PQFN, Surface Mount
MOSFET, 20V, 40A, 2.5 MOHM, 2.5V DRIVE CAPABLE, PQFN3.3X3.3
MOSFET Operating temperature: -55...175 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 37 W
MOSFET,N CH,DIODE,20V,26A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; On State Resistance:0.002ohm; Rds(on) Test Voltage Vgs:4.5V; Voltage Vgs Max:12V; Operating Temperature Range:-55°C to +150°C; Transistor ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageVQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)26 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance3.5 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance3.62 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation37 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels1
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max2.5 mΩ
Resistance3.5 MΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage800 mV
Turn-Off Delay Time57 ns
Turn-On Delay Time7.5 ns
Dimensions
Height900 µm
Length3.2766 mm
Width3.3 mm