공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-04-27
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
관련 부품
NXP SemiconductorsBUK7504-40A,127
Trans MOSFET N-CH 40V 198A Automotive 3-Pin(3+Tab) TO-220AB Rail
InfineonIRF2807PBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
NXP SemiconductorsBUK7528-55A,127
Trans MOSFET N-CH 55V 42A Automotive 3-Pin(3+Tab) TO-220AB Rail
NXP SemiconductorsBUK7516-55A,127
Trans MOSFET N-CH 55V 65.7A Automotive 3-Pin(3+Tab) TO-220AB Tube
NXP SemiconductorsBUK9510-55A,127
Trans MOSFET N-CH 55V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
설명
유통업체에서 제공한 Infineon IRL40B215에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Single N-Channel 40 V 2.7 mOhm 56 nC HEXFET® Power Mosfet - TO-220-3
MOSFET, 40V, 120A, 2.7 MOHM, 56 NC QG, LOGIC LEVEL, TO220
Trans MOSFET N-CH Si 40V 164A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 120A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 40V, 120A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountSurface Mount, Through Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance2.7 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.225 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation143 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.7 mΩ
Package Quantity1000
Power Dissipation143 W
Rds On Max2.7 mΩ
Threshold Voltage2.4 V
Turn-Off Delay Time63 ns
Turn-On Delay Time21 ns
Dimensions
Height20.56 mm
Length10.67 mm
Width4.83 mm