공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-20
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
관련 부품
InfineonIRFB7434PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
InfineonIRFB7430PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220AB package, TO220-3, RoHS
설명
유통업체에서 제공한 Infineon IRL40B209에 대한 설명입니다.
Single N-Channel 40 V 1.25 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3
40V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package, TO220-3, RoHS
Infineon SCT
MOSFET, 40V, 195A, 1.25 MOHM, 180 NC QG, LOGIC LEVEL, TO220
Trans MOSFET N-CH Si 40V 414A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 195A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 40V, 195A, TO-220AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.001ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
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- INFI
- INFENION
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- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)195 A
Drain to Source Resistance1.25 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.14 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance1.25 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max1.25 mΩ
Schedule B8541290080
Threshold Voltage2.4 V
Turn-Off Delay Time188 ns
Turn-On Delay Time56 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm