가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRL3803STRRPBF | 298 | 19h | |||||||||
| RS (Formerly Allied Electronics) | IRL3803STRRPBF | 0 | 800 | Bulk | 8h | |||||||
| Microchip USA | IRL3803STRRPBF | 2,492 | 600 | Bulk | 13h | |||||||
| Win Source | WS-IRL3803STRRPBF | 48,654 | 40 | 20h | ||||||||
| Worldway Electronics | IRL3803STRRPBF | 10,946 | 7 | Tape & Reel | 19h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-19
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIRL3803SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS +/-16V
InfineonIRL7833SPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 150A;D2Pak;PD 140W;VGS +/-2
onsemiNTB125N02RT4
Cut Tape (CT) Surface Mount N-CHANNEL Single Mosfet Transistor 120.5A 1.98W 21ns 24V
설명
유통업체에서 제공한 Infineon IRL3803STRRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.006Ohm;ID 140A;D2Pak;PD 200W;VGS +/-16V
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 30V 140A 3-Pin(2+Tab) D2PAK T/R
Advanced Process Technology | MOSFET N-CH 30V 140A D2PAK
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:140A; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)140 A
Current Rating140 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance5 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max6 mΩ
Rise Time230 ns
Turn-Off Delay Time29 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height4.826 mm
Length10.668 mm
Width9.65 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책