공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-11-04
LTD Date2013-05-04
설명
유통업체에서 제공한 Infineon IRG6S320UPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 330V 50A 3-Pin (2+Tab) D2PAK
330V Plasma Display Panel Trench IGBT in a D2-Pak package
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB
MOSFET; 330V; 50.000A; D2PAK | Infineon IRG6S320UPBF
Transistor; Transistor Type:IGBT; Transistor Polarity:N Channel; Collector Emitter Voltage, Vces:330V; Continuous Collector Current, Ic:50A; Collector Emitter Saturation Voltage, Vce(sat):1.45V; Power Dissipation, Pd:114W ;RoHS Compliant: Yes
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage330 V
Collector Emitter Saturation Voltage1.65 V
Collector Emitter Voltage (VCEO)330 V
Element ConfigurationSingle
Max Collector Current42 A
Max Operating Temperature175 °C
Max Power Dissipation114 W
Min Operating Temperature-40 °C
Number of Elements1
Power Dissipation114 W