공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-05-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTGD7NC60HT4
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESH IGBT | IGBT 600V 25A 70W DPAK
STMicroelectronicsSTGD14NC60KT4
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) DPAK T/R / IGBT 600V 25A 80W DPAK
STMicroelectronicsSTGD10HF60KD
Automotive-grade 10 A, 600 V short-circuit rugged IGBT with Ultrafast diode
설명
유통업체에서 제공한 Infineon IRG4RC20FTRLPBF에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 22A 3-Pin(2+Tab) DPAK T/R
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, TO-252AA
600V Fast 1-8 kHz Single IGBT in a D-Pak package
SINGLE IGBT, 600V, 22A; Transistor Type:IGBT; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Reel Quantity:3000 ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)600 V
Current Rating22 A
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current22 A
Max Operating Temperature150 °C
Max Power Dissipation66 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel
Power Dissipation66 W
Rise Time24 ns
Voltage Rating (DC)600 V
Dimensions
Height1.8034 mm
Length6.7056 mm
Width6.223 mm