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Copacked 600V IGBT in a D2-Pak package with a hyperfast 1-8 kHz diode, D2PAKCOPAK, RoHS
설명
유통업체에서 제공한 Infineon IRG4BC30KDSTRRP에 대한 설명입니다.
Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(2+Tab) D2PAK T/R
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SHORT CIRCUIT RATED ULTRAFAST INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Voltage (VCEO)2.7 V
Element ConfigurationSingle
Max Collector Current28 A
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Operating Temperature-55 °C
Reverse Recovery Time42 ns
Schedule B8541290080