Infineon IRG4BC20KD-STRLP
$ 1.18
관련 부품
onsemiHGT1S3N60A4DS9A
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-263AB
STMicroelectronicsSTGB7H60DF
H Series 600 V 7 A Surface Mount Trench Gate Field-Stop IGBT - D2PAK
설명
유통업체에서 제공한 Infineon IRG4BC20KD-STRLP에 대한 설명입니다.
IGBT 600V 16A 60W D2PAK / Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(2+Tab) D2PAK T/R
IGBT Utrafast 600V 10A D2PAK
RS APAC
IGBT 600V 16A 60W D2PAK
IGBT 16A, 600V, N CHANNEL
IGBT, COPAK, D2-PAK
IRG4BC20KD-STRLP IR
IGBT, COPAK, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:16A; Voltage, Vce Sat Max:2.27V; Power Dissipation:60W; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:32A; Power, Pd:60W; Time, Rise:34ns
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기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.27 V
Collector Emitter Voltage (VCEO)2.8 V
Element ConfigurationSingle
Max Breakdown Voltage600 V
Max Collector Current16 A
Max Operating Temperature150 °C
Max Power Dissipation60 W
Min Operating Temperature-55 °C
PackagingCut Tape (CT)
Power Dissipation60 W
Reverse Recovery Time37 ns
Rise Time34 ns
Schedule B8541290080
TerminationSMD/SMT