Infineon IRFZ46NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de

Single N-Channel 55 V 16.5 mOhm 72 nC HEXFET® Power Mosfet - TO-220-3

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Transistor MOSFET N-Ch. 46A/55V TO220 IRFZ 46 N PBF

Power MOSFET, N Channel, 55 V, 46 A, 0.0165 ohm, TO-220AB, Through Hole

Transistor IRFZ46N MOSFET N-Channel 55V 28A TO-220

RoHS|YES|MEDIX|44222|TRANS MOSFET N-CH 55V 53A 3-PI|N(3+TAB) TO-220AB|

Trans MOSFET N-CH 55V 53A 3-Pin(3+Tab) TO-220AB

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 107 W

Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

N Channel Mosfet, 55V, 53A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:53A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFZ46NPBF.

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 55V, 46A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:46A; Resistance, Rds On:0.02ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:180A; Lead Spacing:2.54mm; No. of Pins:3; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation:88W; Power, Pd:88W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.7°C/W; Transistors, No. of:1; Voltage, Vds Max:55V