공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-08-25
Lifecycle StatusObsolete (Last Updated: 8 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRFZ48VPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 72A;TO-220AB;PD 150W;gFS 35S
InfineonIRFZ48ZPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 8.6 Milliohms;ID 61A;TO-220AB;PD 91W;gFS 24S
InfineonIRFZ48NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
설명
유통업체에서 제공한 Infineon IRFZ44VZPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S
Single N-Channel 60 V 12 mOhm 43 nC HEXFET® Power Mosfet - TO-220-3
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 57A 3-Pin(3+Tab) TO-220AB
Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
92W(Tc) 20V 4V@ 250µA 65nC@ 10 V 1individualNChannel 60V 12mΩ@ 34A,10V 57A 1.69nF@25V TO-220AB Through hole mounting 10mm*4.4mm*15.65mm
Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:57A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:92W; No. of Pins:3Pins; MSL:- RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 57 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 62 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 92
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Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
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- INFIENON
- IR/INFINEON
- INFINEON/IR
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- LNFINEON
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)57 A
Current Rating57 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationSingle
Fall Time38 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.69 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation92 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance12 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation92 W
Rds On Max12 mΩ
Resistance12 mΩ
Rise Time62 ns
Schedule B8541290080
TerminationThrough Hole
Turn-Off Delay Time35 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)60 V
Dimensions
Height20.56 mm
Length10.6426 mm
Width4.82 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책