Infineon IRFU5505PBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;I-Pak (TO-251AA);PD 57W

Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-251AA

-55V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

MOSFET, P, -55V, -18A, I-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:-18A; Junction to Case Thermal Resistance A:2.2°C/W; On State resistance @ Vgs = 10V:110ohm; Package / Case:IPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; Termination Type:Through Hole; Turn Off Time:16ns; Turn On Time:28ns; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.