공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-20
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
설명
유통업체에서 제공한 Infineon IRFU2307ZPBF에 대한 설명입니다.
MOSFET, N Ch., Automotive, 75V, 53A, 16 MOHM, 50 NC QG, I-PAK, Pb-Free
75V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Trans MOSFET N-CH 75V 53A 3-Pin(3+Tab) IPAK
N-Ch 75V 42A 110W 0,016R TO251AA
Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 75V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:53A; Drain Source Voltage Vds:75V; On Resistance Rds(on):12.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:2190pF; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:210A; Reverse Recovery Time trr Typ:31ns; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.19 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation110 W
Rds On Max16 mΩ
Recovery Time47 ns
Reverse Recovery Time31 ns
Rise Time65 ns
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time44 ns
Turn-On Delay Time16 ns
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm