공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-18
Lifecycle StatusProduction (Last Updated: 3 months ago)
관련 부품
InfineonIPI032N06N3GAKSA1
MOSFET N-CH 60V 120A TO262-3 / N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO262-3
STMicroelectronicsSTFI260N6F6
N-channel 60 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in I2PAKFP package
설명
유통업체에서 제공한 Infineon IRFSL7730PBF에 대한 설명입니다.
Single N-Channel 75 V 2.6 mOhm 271 nC HEXFET® Power Mosfet - TO-262-3
Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
Benefits: Improved gate, avalanche and dynamic dV/dt ruggedness; Fully characterized capacitance and avalanche SOA; Enhanced body diode dV/dt and dI/dt capability; Lead-free, RoHS compliant; StrongIRFET
Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:246A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
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- Infineon Technologies
- INF
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- INFIN
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- INFIEON
- INFINEON TECH
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- INFINEON/IR
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
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기술 사양
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.084002 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance2.6 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time115 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance13.66 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.6 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max2.6 mΩ
Rise Time120 ns
Turn-Off Delay Time180 ns
Turn-On Delay Time21 ns
Dimensions
Height15.01 mm