공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-03-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2017-10-12
LTD Date2018-04-12
관련 부품
설명
유통업체에서 제공한 Infineon IRFSL4321PBF에 대한 설명입니다.
IRFSL4321PBF N-channel MOSFET Transistor, 85 A, 150 V, 3-Pin TO-262
Single N-Channel 150 V 15 mOhm 110 nC HEXFET® Power Mosfet - TO-262
150V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
Infineon SCT
TUBE / MOSFET, 150V, 83A, 15 mOhm, 71 nC Qg, TO-262
HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
MOSFET, N-CH, 150V, 85A, TO-262-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 85A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.012ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5V; Po
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- Infineon Technologies
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기술 사양
Physical
Case/PackageTO-262
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)75 A
Current Rating83 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.46 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation330 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance15 mΩ
Package Quantity1000
Power Dissipation330 W
Rds On Max15 mΩ
Rise Time60 ns
Threshold Voltage5 V
Turn-Off Delay Time25 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)150 V
Dimensions
Height9.65 mm
Length10.668 mm
Width4.826 mm