가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFS7434PBF | 100 | 10h | |||||||||
| RS (Formerly Allied Electronics) | IRFS7434PBF | 0 | 3200 | Bulk | 23h | |||||||
| Farnell | IRFS7434PBF | 0 | 1 | 10h | ||||||||
| Win Source | WS-IRFS7434PBF | 7,320 | 20 | 11h | ||||||||
| Worldway Electronics | IRFS7434PBF | 8,045 | 7 | Tube | 10h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
관련 부품
InfineonAUIRFS8408-7P
Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonIRFS7437PBF
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK
설명
유통업체에서 제공한 Infineon IRFS7434PBF에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
Infineon SCT
294W(Tc) 20V 3.9V@ 250¦ÌA 324nC@ 10 V 1N 40V 1.6m¦¸@ 100A,10V 195A 10.82nF@25V D2PAK
Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
MOSFET, N-CH, 40V, 195A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 195A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.00125ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V
제조업체 별칭
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- Infineon Technologies
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.6 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance10.82 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation294 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.6 mΩ
Package Quantity1000
Power Dissipation294 W
Rds On Max1.6 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time115 ns
Turn-On Delay Time24 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm