Infineon IRFR9N20DPBF

Name: Infineon IRFR9N20DPBF
Brand: Infineon
SKU: IRFR9N20DPBF

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

$ 1.52

Obsolete

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가격 및 재고

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모든 가격 할인 보기

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR9N20DPBF	0	1	Bulk	1.690	1.520	1.520	1.520	1.520	23h
Farnell	IRFR9N20DPBF	0	1		0.993*	0.993*	0.624*	0.488*	0.488*	9h
Win Source	WS-IRFR9N20DPBF	5,550	10			6.256	4.171	4.171	4.171	10h
Worldway Electronics	IRFR9N20DPBF	15,266	7	Tube		0.483	0.474	0.456	0.447	1d
Fly-Wing Technology	IRFR9N20DPBF	35,841			4.028	3.305	3.202	2.995	2.995	2d

CAD 모델

심볼, 풋프린트 및 3D STEP 다운로드

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데이터시트 및 문서

Infineon IRFR9N20DPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.

IHS

Datasheet12 페이지21년 전

Datasheet11 페이지21년 전

element14 APAC

iiiC

DigiKey

Newark

공급망

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

설명

유통업체에서 제공한 Infineon IRFR9N20DPBF에 대한 설명입니다.

200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

SMPS MOSFET Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

N CHANNEL MOSFET, 200V, 9.4A, D-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:86W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Junction to Case Thermal Resistance A:1.75°C/W; Package / Case:DPAK; Power Dissipation Pd:86W; Power Dissipation Pd:86W; Pulse Current Idm:38A; SMD Marking:IRFR9N20D; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon