Infineon IRFR9024NTRLPBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.175Ohm;ID -11A;D-Pak (TO-252AA);PD 38W

Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-252-3

-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-11A; On Resistance, Rds(on):175mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:DPAK ;RoHS Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -11 / Drain-Source Voltage (Vds) V = -55 / ON Resistance (Rds(on)) mOhm = 175 / Gate-Source Voltage V = 20 / Fall Time ns = 37 / Rise Time ns = 55 / Turn-OFF Delay Time ns = 23 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 38