가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFR825TRPBF | 19,871 | 10h | |||||||||
| Farnell | IRFR825TRPBF | 0 | 1 | Cut Tape | 8h | |||||||
| Verical | IRFR825TRPBF | 19,871 | 250 | |||||||||
| Win Source | WS-IRFR825TRPBF | 940 | 90 | 10h | ||||||||
| Worldway Electronics | IRFR825TRPBF | 12,039 | 7 | Tape & Reel | 11h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-04-11
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-09-30
LTD Date2025-03-31
관련 부품
InfineonIRFR825PBF
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
onsemiFQD6N50CTF
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Infineon IRFR825TRPBF에 대한 설명입니다.
Single N-Channel 500 V 1.3 Ohm 34 nC HEXFET® Power Mosfet - TO-252AA
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Lighting LED
500V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 6A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 500V, 6A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 1.05ohm; R; Available until stocks are exhausted Alternative available
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1.3 Ω
Drain to Source Voltage (Vdss)500 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.346 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation119 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.3 Ω
Package Quantity2000
PackagingTape & Reel
Power Dissipation119 W
Rds On Max1.3 Ω
Resistance1.3 Ω
Rise Time25 ns
Schedule B8541290080
Turn-Off Delay Time30 ns
Turn-On Delay Time8.5 ns
Dimensions
Height2.52 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책