Infineon IRFR5505PBF

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.11Ohm;ID -18A;D-Pak (TO-252AA);PD 57W

Transistor MOSFET P Channel 55 Volt 18 Amp 3 Pin 2+ Tab Dpak

Single P-Channel 55 V 0.11 Ohm 32 nC HEXFET® Power Mosfet - TO-252AA

-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

MOSFET, P, -55V, -18A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:55V; On Resistance Rds(on):110mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:57W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-18A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.2°C/W; Package / Case:DPAK; Power Dissipation Pd:57W; Power Dissipation Pd:57W; Pulse Current Idm:64A; SMD Marking:IRFR5505; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V