공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-08
LTD Date2012-07-08
설명
유통업체에서 제공한 Infineon IRFR3504PBF에 대한 설명입니다.
40V Single N-Channel HEXFET Power MOSFET in a D-Pak package
MOSFET, 40V, 87A, 9.2 MOHM, 48 NC QG, D-PAK
Trans MOSFET N-CH 40V 87A 3-Pin (2+Tab) DPAK
Power Field-Effect Transistor, 30A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N, 40V, 87A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:30A; Junction to Case Thermal Resistance A:1.09°C/W; On State resistance @ Vgs = 10V:9.2mohm; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:350A; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating87 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance9.2 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.15 nF
Max Operating Temperature175 °C
Max Power Dissipation140 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
Power Dissipation140 W
Rds On Max9.2 mΩ
Resistance9.2 mΩ
Rise Time53 ns
Threshold Voltage4 V
Turn-Off Delay Time36 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)40 V