공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusProduction (Last Updated: 9 months ago)
관련 부품
InfineonIRFR2405PBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
InfineonAUIRFR2905Z
Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS
STMicroelectronicsSTD45P4LLF6AG
Power MOSFET, P Channel, 40 V, 50 A, 0.012 ohm, TO-252 (DPAK), Surface Mount
설명
유통업체에서 제공한 Infineon IRFR2405TRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0118Ohm;ID 56A;D-Pak (TO-252AA);PD 110W
MOSFET N-CH 55V 56A DPAK N-Channel 55 V 56A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Single N-Channel 55V 16 mOhm 70 nC HEXFET® Power Mosfet - DPAK
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:56A; On Resistance, Rds(on):16mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating56 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vds)55 V
Fall Time78 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.43 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance16 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max16 mΩ
Rise Time130 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)55 V
Dimensions
Height2.52 mm
Length6.7056 mm
Width6.22 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
규정 준수 정책