유통업체에서 제공한 Infineon IRFR024NTRLPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.075Ohm;ID 17A;D-Pak (TO-252AA);PD 45W
Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
45W(Tc) 20V 4V@ 250¦ÌA 20nC@ 10 V 1individualNChannel 55V 75m¦¸@ 10A,10V 17A 370pF@25V TO-252 SMD mount 6.5mm*6.22mm*2.3mm
N CHANNEL MOSFET, 55V, 17A, DPAK; TRANSI; N CHANNEL MOSFET, 55V, 17A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:55V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3Pins
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.