가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRFL4310TRPBF | 95,000 | 2500 | 6h | ||||||||
| Newark | IRFL4310TRPBF | 159 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFL4310TRPBF | 2,120 | 1 | |||||||||
| DigiKey | IRFL4310TRPBFCT-ND | 9,793 | 1 | Cut Tape | ||||||||
| Future Electronics | IRFL4310TRPBF | 0 | 2500 | Tape & Reel |
공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-30
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRFL4310PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
InfineonBSP372NH6327XTSA1
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
설명
유통업체에서 제공한 Infineon IRFL4310TRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS
Infineon SCT
Power MOSFET, N Channel, 100 V, 1.6 A, 0.2 ohm, SOT-223, Surface Mount
Trans MOSFET N-CH 100V 2.2A 4-Pin(3+Tab) SOT-223 T/R
IRFL4310TRPBF,MOSFET, 100V, 1. 6A, 200 MOHM, 17 NC QG, SOT-2
HEXFET Power MOSFET Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:1.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:1W; No. Of Pins:4Pins Rohs Compliant: Yes |Infineon IRFL4310TRPBF.
MOSFET, N CH, 100V, 1.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOT-223
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)1.6 A
Current Rating2.2 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance330 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance200 mΩ
Package Quantity2500
PackagingTape & Reel
Power Dissipation1 W
Rds On Max200 mΩ
Resistance200 mΩ
Rise Time18 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time7.8 ns
Voltage Rating (DC)100 V
Dimensions
Height1.8 mm
Length6.6802 mm
Width3.7 mm
규정 준수
환경 분류
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
규정 준수 정책