가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFIZ48NPBF | 1,795 | 9h | |||||||||
| RS (Formerly Allied Electronics) | IRFIZ48NPBF | 0 | 3K | Bulk | 1d | |||||||
| Farnell | IRFIZ48NPBF.. | 0 | 1 | 8h | ||||||||
| Microchip USA | IRFIZ48N | 291 | 600 | Tube | 3h | |||||||
| Verical | IRFIZ48NPBF | 1,795 | 376 |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1996-04-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-12-28
LTD Date2013-06-28
관련 부품
InfineonIRFI1010NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 49A;TO-220 Full-Pak;PD 58W;-55de
InfineonIRFIZ44NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.024Ohm;ID 31A;TO-220 Full-Pak;PD 45W;-55de
STMicroelectronicsSTP55NF06FP
N-channel 60 V, 0.015 Ohm, 50 A STripFET(TM) II Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Infineon IRFIZ48NPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 36A;TO-220 Full-Pak;PD 42W;-55de
Single N-Channel 55 V 0.016 Ohm 89 nC HEXFET® Power Mosfet - TO-220-3FP
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3-3, RoHS
Infineon SCT
Trans MOSFET N-CH 55V 36A 3-Pin(3+Tab) TO-220 Full-Pack
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 42 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
Transistor Polarity:n Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:36A; On Resistance Rds(On):0.016Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)36 A
Current Rating36 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time48 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance16 mΩ
Package Quantity2000
PackagingBulk
Power Dissipation42 W
Rds On Max16 mΩ
Recovery Time140 ns
Rise Time78 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)55 V
Dimensions
Height19.8 mm
Length10.6172 mm
Width4.826 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책