Infineon IRFI530NPBF

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.11Ohm;ID 12A;TO-220 Full-Pak;PD 41W;-55de

Single N-Channel 100 V 0.11 Ohm 44 nC HEXFET® Power Mosfet - TO-220-3FP

100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package, FULLPAK220-3, RoHS

Trans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220 Full-Pak

MOSFET Operating temperature: -55...175 °C Housing type: TO-220FP Polarity: N Power dissipation: 33 W

41W(Tc) 20V 4V@ 250¦ÌA 44nC@ 10 V 1N 100V 110m¦¸@ 6.6A,10V 640pF@25V TO-220

HEXFET POWER MOSFET Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, FULLPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):108mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:33W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Isolation Voltage:2.5kV; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-220FP; Power Dissipation Pd:33W; Power Dissipation Pd:33W; Pulse Current Idm:60A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.