가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRFHM9331TRPBF | 105 | 1 | |||||||||
| RS (Formerly Allied Electronics) | IRFHM9331TRPBF | 0 | 5 | Bulk | 2h | |||||||
| Future Electronics | IRFHM9331TRPBF | 0 | 4K | Tape & Reel | ||||||||
| Avnet | IRFHM9331TRPBF | 0 | 4K | 12h | ||||||||
| Farnell | IRFHM9331TRPBF.. | 0 | 1 | Cut Tape | 10h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-30
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
관련 부품
InfineonIRFH3702TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
InfineonIRFH8334TRPBF
N CH POWER MOSFET, HEXFET, 30V, 14A, PQFN-8; Transistor Polarity:N Channel; Cont
InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
설명
유통업체에서 제공한 Infineon IRFHM9331TRPBF에 대한 설명입니다.
Single P-Channel 30 V 14.6 mOhm 32 nC HEXFET® Power Mosfet - PQFN 3 x 3 mm
-30V Single P-Channel HEXFET Power MOSFET in a PQFN 3mm x 3mm package, PQFN 3X3 8L, RoHS
Infineon SCT
Transistor P-MOSFET IRFHM9331TRPBF, PQFN-8, IRF
Power MOSFET, P Channel, 30 V, 11 A, 0.01 ohm, PQFN, Surface Mount
Trans MOSFET P-CH 30V 11A 8-Pin PQFN EP T/R
P CHANNEL, MOSFET, -30V, -11A, PQFN; P CHANNEL, MOSFET, -30V, -11A, PQFN; Transistor Polarity:P Channel; Continuous Drain Current Id:-11A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -11 / Drain-Source Voltage (Vds) V = -30 / ON Resistance (Rds(on)) mOhm = 14.6 / Gate-Source Voltage V = 25 / Fall Time ns = 60 / Rise Time ns = 27 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.8
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- Infineon Technologies
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- INFINEON TECHNOLOGIE
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- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance14.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time60 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.543 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.8 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance14.6 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max10 mΩ
Resistance14.6 MΩ
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time72 ns
Turn-On Delay Time11 ns
Dimensions
Height1 mm
Length2.9972 mm
Width2.9972 mm