공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
관련 부품
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
InfineonIPD50N03S207ATMA1
30V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
onsemiNTD70N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 75A 1.87W 1.3ns
설명
유통업체에서 제공한 Infineon IRFHM831TRPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Infineon SCT
MOSFET, 30V, 24A, 7.8 MOHM, 7.3 NC QG, 0.9 OHM RG, PQFN 3.3X3.3
Trans MOSFET N-CH 30V 14A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHAN MOSFET, 30V, 24A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes
MOSFET,N CH,DIODE,30V,14A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):6600µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:14A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.7C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.05 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance7.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation27 W
Rds On Max7.8 mΩ
Resistance12.6 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time6.2 ns
Turn-On Delay Time6.9 ns
Dimensions
Height990.6 µm
Length3.2766 mm
Width3.3 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책