가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFHM792TRPBF | 659 | 14h | |||||||||
| Farnell | IRFHM792TRPBF | 0 | 1 | Cut Tape | 4h | |||||||
| Win Source | WS-IRFHM792TRPBF | 36,600 | 205 | 14h | ||||||||
| Worldway Electronics | IRFHM792TRPBF | 9,529 | 7 | Tape & Reel | 3d | |||||||
| ICPartonline | IRFHM792TRPBF | 23,069 | >1wk |
데이터시트 및 문서
Infineon IRFHM792TRPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트16년 전
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
InfineonBSP372NH6327XTSA1
Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
Diodes Inc.ZXMC10A816N8TC
Mosfet, N & P-Ch, 2.1A, 100V, 150Deg C Rohs Compliant: Yes |Diodes Inc. ZXMC10A816N8TC
설명
유통업체에서 제공한 Infineon IRFHM792TRPBF에 대한 설명입니다.
Dual N-Channel 100 V 195 mOhm 6.3 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
MOSFET, DUAL N-CH, 100V, 4.8A, PQFN; Available until stocks are exhausted Alternative available
Transistor MOSFET Array Dual N-CH 100V 3.4A 8-Pin PQFN T/R
Trans MOSFET N-CH 100V 2.3A 8-Pin PQFN EP T/R / MOSFET 2N-CH 100V 2.3A 8PQFN
N CH MOSFET, DUAL, 100V, 3.4A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.164ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance195 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationDual
Fall Time2.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance251 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.3 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
On-State Resistance195 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max195 mΩ
Rise Time4.7 ns
Turn-Off Delay Time5.2 ns
Turn-On Delay Time3.4 ns
Dimensions
Height1 mm