가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFHM4231TRPBF | 0 | 4K | Bulk | 18h | |||||||
| Farnell | IRFHM4231TRPBF | 0 | 1 | Cut Tape | 2h | |||||||
| Component Stockers USA | IRFHM4231TRPBF | 465 | 1d | |||||||||
| Win Source | WS-IRFHM4231TRPBF | 51,100 | 120 | 3h | ||||||||
| Worldway Electronics | IRFHM4231TRPBF | 15,918 | 7 | Tape & Reel | 2h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-09-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
관련 부품
InfineonIRF8252PBF
2.5W(Ta) 20V 2.35V@ 100¦ÌA 53nC@ 4.5 V 1N 25V 2.7m¦¸@ 25A,10V 25A 5.305nF@13V SOIC-8
InfineonIRFHM4234TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
InfineonIRFH4234TRPBF
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRFHM4231TRPBF에 대한 설명입니다.
25V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Infineon SCT
TAPE AND REEL / MOSFET, 25V, 40A, 3.3mOhm, 10nC, PQFN3.3x3.3 single
HEXFET POWER MOSFET Power Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 25V 22A 8-Pin QFN EP T/R
MOSFET, N CHANNEL, 25V, 40A, PQFN-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0027ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.6V
Benefits: Low Charge (typical 9.7nC); Low RDSon (less than 3.4 mOhms); Low Thermal Resistance to PCB (less than 4.3C/W); Low Profile (less than 0.9mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time5.9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.27 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation29 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance3.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max3.4 mΩ
Rise Time28 ns
Schedule B8541290080
Threshold Voltage1.6 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8.7 ns
Dimensions
Height1.05 mm
Length3.3 mm
Width5 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책