가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFH8325TR2PBF | 0 | 125 | Bulk | 18h | |||||||
| Microchip USA | IRFH8325TR2PBF | 116 | 300 | 18m | ||||||||
| Win Source | WS-IRFH8325TR2PBF | 16,000 | 100 | 7h | ||||||||
| Worldway Electronics | IRFH8325TR2PBF | 12,158 | 7 | Tape & Reel | 6h | |||||||
| ICPartonline | IRFH8325TR2PBF | 33,124 | >1wk |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-04-22
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
관련 부품
InfineonIRFH8324TR2PBF
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8; Transistor Polarity:N Channel; Cont
InfineonIRFH8324TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
설명
유통업체에서 제공한 Infineon IRFH8325TR2PBF에 대한 설명입니다.
N CH POWER MOSFET, HEXFET, 30V, 21A, PQFN-8; Transistor Polarity:N Channel; Cont
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
Trans MOSFET N-CH 30V 21A 8-Pin QFN EP T/R
MOSFET N-Channel 30V 21A HEXFET PQFN8EP
HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,W DIODE,30V,25A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2011)
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)21 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time7.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.487 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation54 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
Power Dissipation3.6 W
Rds On Max5 mΩ
Recovery Time24 ns
Resistance5 MΩ
Rise Time16 ns
Threshold Voltage1.8 V
Turn-Off Delay Time14 ns
Turn-On Delay Time12 ns
Dimensions
Height1.17 mm
Length5.85 mm
Width5 mm