Infineon IRFH7004TRPBF

40V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS

Single N-Channel 40 V 1.4 mOhm 129 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

MOSFET, 40V, 100A, 1.4 mOhm, 134 nC Qg,PQFN56

MOSFET Operating temperature: -55...150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 156 W

MOSFET, N-CH, 40V, 100A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:5; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.