공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-03-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
관련 부품
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설명
유통업체에서 제공한 Infineon IRFH5303TRPBF에 대한 설명입니다.
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
MOSFET, 30V, 82A, 4.2 MOHM MAX, 15 NC QG, LOW RG, PQFN 5X6
Trans MOSFET N-CH 30V 23A 8-Pin QFN EP T/R
N CH POWER MOSFET, HEXFET, 30V, 23A, PQFN-8
Power Field-Effect Transistor, 23A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN EP
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)23 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.8 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.19 nF
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation46 W
Rds On Max4.2 mΩ
Rise Time31 ns
Turn-Off Delay Time8.8 ns
Turn-On Delay Time11 ns
Dimensions
Height838.2 µm
Length5.9944 mm
Width5 mm
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책