가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | IRFH4226TRPBF | 2,320 | 17h | |||||||||
| Win Source | WS-IRFH4226TRPBF | 25,900 | 30 | 18h | ||||||||
| Worldway Electronics | IRFH4226TRPBF | 18,999 | 7 | Tape & Reel | 17h | |||||||
| ICPartonline | IRFH4226TRPBF | 25,361 | >1wk | |||||||||
| UnikeyIC | IRFH4226TRPBF | 2,218 | 89 | Tape & Reel | 17h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-04-24
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2016-12-02
LTD Date2017-09-02
관련 부품
InfineonIRFH8325TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
InfineonIRFH3702TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package, PQFN 3X3 8L, RoHS
설명
유통업체에서 제공한 Infineon IRFH4226TRPBF에 대한 설명입니다.
25V Single N-Channel HEXFET Power MOSFET in a PQFN 5 x 6 B package, PG-TDSON-8, RoHS
Infineon SCT
Trans MOSFET N-CH 25V 30A 8-Pin QFN EP T/R
3.4W(Ta),46W(Tc) 20V 2.1V@ 50¦ÌA 32nC@ 10V 1N 25V 2.4m¦¸@ 30A,10V 30A 2nF@13V QFN 6mm*5mm*830¦Ìm
Power Field-Effect Transistor, 30A I(D), 25V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: Low Charge (typical 16 nC); Low RDSon (less than 2.4 mOhms); Low Thermal Resistance to PCB (less than 2.7 C/W); Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; RoHS Compliant, Halogen-Free; MSL1, Industrial Qualification; FastIRFET
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)30 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance3.3 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time8.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance2.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.4 W
Rds On Max2.4 mΩ
Rise Time35 ns
Turn-Off Delay Time14 ns
Turn-On Delay Time11 ns
Dimensions
Height950 µm