유통업체에서 제공한 Infineon IRFB61N15DPBF에 대한 설명입니다.
Transistor MOSFET Negative Channel 150 Volt 60A 3-Pin(3+Tab) TO-220AB
Single N-Channel 150 V 0.032 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
MOSFET, 150V, 60A, 32 mOhm, 95 nC Qg, TO-220AB
Trans MOSFET N-CH 150V 60A 3-Pin(3+Tab) TO-220AB
SMPS MOSFET Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; On Resistance Rds(On):0.032Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Msl:- Rohs Compliant: Yes
MOSFET, N, 150V, 60A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:150V; Current, Id Cont:60A; Resistance, Rds On:0.032ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5.5V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:250A; Power Dissipation:330W; Power, Pd:330W; Resistance, Rds on @ Vgs = 10V:32ohm; Thermal Resistance, Junction to Case A:0.45°C/W; Voltage, Vds Max:150V