공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-01-06
Lifecycle StatusObsolete (Last Updated: 6 months ago)
관련 부품
InfineonIRF1010EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
InfineonIRFB3206GPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
NXP SemiconductorsBUK7506-55B,127
Trans MOSFET N-CH 55V 145A Automotive 3-Pin(3+Tab) TO-220AB Rail
설명
유통업체에서 제공한 Infineon IRFB3306GPBF에 대한 설명입니다.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free Halogen Free TO-220AB package
MOSFET, 60V, 160A, 4.2 MOHM, 85 NC QG, TO-220AB, HALOGEN-FREE
Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive
Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-220AB
HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:160A; Drain Source Voltage, Vds:60V; On Resistance, Rds(on):4.2mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:230W ;RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time77 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation230 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance4.2 mΩ
Package Quantity1000
Power Dissipation230 W
Rds On Max4.2 mΩ
Rise Time76 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time15 ns
Dimensions
Height20.56 mm
Length10.668 mm
Width4.826 mm