설명
유통업체에서 제공한 Infineon IRF9230에 대한 설명입니다.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Single P-Channel 200 V 75 W 31 nC Hexfet Transistor Through Hole- TO-204AA
-200V Single P-Channel Hi-Rel MOSFET in a TO-204AA package, TO-204AA-2
Infineon SCT
Power Field-Effect Transistor, 6.5A I(D), 200V, 0.92ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
MOSFET, P, TO-3; Transistor Polarity:P Channel; Continuous Drain Current Id:6.5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-3; No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Id Max:-6.5A; Current Temperature:25°C; Device Marking:IRF9230; Fixing Centres:30mm; Full Power Rating Temperature:25°C; Lead Spacing:11mm; No. of Transistors:1; Package / Case:TO-3; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Pulse Current Idm:26A; Voltage Vgs Max:-4V
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기술 사양
Physical
Body MaterialMetal
Case/PackageTO-3
MountThrough Hole
Number of Pins2
Number of Terminals2
Technical
Continuous Drain Current (ID)6.5 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance920 mΩ
Drain to Source Voltage (Vdss)-200 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation75 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Elements1
On-State Resistance800 mΩ
Power Dissipation75 W
Threshold Voltage-4 V
Dimensions
Lead Pitch11 mm