공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2022-09-30
LTD Date2023-03-31
관련 부품
NXP SemiconductorsPSMN5R9-30YL,115
Power Field-Effect Transistor, 78A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
NXP SemiconductorsPH9030AL,115
Compliant Surface Mount 9 ns Lead Free Tape & Reel (TR) 28 ns 8 mΩ 11 MΩ
onsemiNTMFS4839NT1G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 9.5A Ta 64A Tc 64A 2.17W 7ns
설명
유통업체에서 제공한 Infineon IRF8327STRPBF에 대한 설명입니다.
Single N-Channel 30 V 5.1 mOhm 9.2 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
2.2W(Ta)，42W(Tc) 20V 2.4V@ 25µA 14nC@ 4.5 V 1individualNChannel 30V 7.3mΩ@ 14A,10V 14A，60A 1.43nF@15V MICRO-8 direct mounting，SMD mount 3mm*3mm*1.11mm
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals2
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.3 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time5.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.43 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance7.3 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.2 W
Rds On Max7.3 mΩ
Rise Time8.9 ns
Turn-Off Delay Time9.3 ns
Turn-On Delay Time7.8 ns
Dimensions
Height700 µm