공급망
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 6 months ago)
관련 부품
InfineonIRF7493PBF
MOSFET, Power;N-Ch;VDSS 80V;RDS(ON) 11.5 Milliohms;ID 9.3A;SO-8;PD 2.5W;VGS +/-2
InfineonIRF7853PBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14.4 Milliohms;ID 8.3A;SO-8;PD 2.5W;gFS 11S
설명
유통업체에서 제공한 Infineon IRF7854PBF에 대한 설명입니다.
MOSFET, N Ch., 80V, 10A, 13.4 MOHM, 27 NC QG, SO-8, Pb-Free
80V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package
Trans MOSFET N-CH 80V 10A 8-Pin SOIC Tube
HEXFET POWER MOSFET Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 80V, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:80V; On Resistance Rds(on):13.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:79mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Base Number:7854; Current Id Max:10A; Output Current Max:2.5A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:79mW; Pulse Current Idm:79A; Termination Type:SMD; Voltage Vds Typ:80V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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- Infineon Technologies
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기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage80 V
Drain to Source Resistance13.4 mΩ
Drain to Source Voltage (Vdss)80 V
Dual Supply Voltage80 V
Fall Time8.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.62 nF
Max Junction Temperature (Tj)10 °C
Max Operating Temperature150 °C
Max Output Current2.5 A
Max Power Dissipation2.5 W
Min Breakdown Voltage80 V
Min Operating Temperature-55 °C
Nominal Vgs4.9 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2.5 W
Rds On Max13.4 mΩ
Recovery Time65 ns
Resistance13.4 MΩ
Rise Time8.5 ns
TerminationSMD/SMT
Threshold Voltage4.9 V
Turn-Off Delay Time15 ns
Turn-On Delay Time9.4 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm