공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
관련 부품
InfineonIRF7504TRPBF
Benefits: RoHS Compliant; Fast Switching; Low Profile (less than 1.1mm); Dual P-Channel MOSFET
설명
유통업체에서 제공한 Infineon IRF7601TRPBF에 대한 설명입니다.
IRF7601PBF N-CHANNEL MOSFET TRANSISTOR, 5.7 A, 20 V, 8-PIN MICRO
Single N-Channel 20 V 0.050 Ohm 22 nC HEXFET® Power Mosfet - MICRO-8
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor Polarity:n Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.7A; On Resistance Rds(On):0.035Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageMSOP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)5.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time32 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance650 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation450 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance35 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.8 W
Rds On Max35 mΩ
Rise Time47 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time5.1 ns
Dimensions
Height1.11 mm
Length3 mm