가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF7501TRPBF | 0 | 4K | Bulk | 20h | |||||||
| Farnell | IRF7501 | 0 | 1 | 3h | ||||||||
| Win Source | WS-IRF7501 | 22,000 | 22 | 5h | ||||||||
| Worldway Electronics | IRF7501TRPBF | 17,067 | 7 | Tape & Reel | 4h | |||||||
| ICPartonline | IRF7501TRPBF | 38,538 | 3d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
관련 부품
InfineonIRF7101TRPBF
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.1Ohm;ID 3.5A;SO-8;PD 2W;VGS +/-12V
InfineonIRF7404PBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.04Ohm;ID -6.7A;SO-8;PD 2.5W;VGS +/-12V
Diodes Inc.DMC2020USD-13
Dual N/P-Channel 20 V 28/45 mOhm 11.6/15.4 nC 2.14 W Silicon Mosfet - SOIC-8
설명
유통업체에서 제공한 Infineon IRF7501TRPBF에 대한 설명입니다.
Dual N-Channel 20 V 0.135 Ohm 5.3 nC HEXFET® Power Mosfet - MICRO-8
Transistor MOSFET Array Dual N-CH 20V 2.4A 8-Pin Micro8 T/R
20V Dual N-Channel HEXFET Power MOSFET in a Micro 8 package, MICRO8, RoHS
Infineon SCT
Dual N Channel Mosfet, 20V, Micro8, Full Reel; Transistor Polarity:dual N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.085Ohm; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:8Pins Rohs Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)2.4 A
Current Rating2.4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance135 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationDual
Fall Time16 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance260 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation390 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels2
Number of Elements2
On-State Resistance135 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation1.25 W
Rds On Max135 mΩ
Resistance135 mΩ
Rise Time24 ns
Schedule B8541290080
Threshold Voltage700 mV
Turn-Off Delay Time15 ns
Turn-On Delay Time5.7 ns
Voltage Rating (DC)20 V
Dimensions
Height1.11 mm
Length3 mm
Width3 mm