유통업체에서 제공한 Infineon IRF7469TRPBF에 대한 설명입니다.
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 12 Milliohms;ID 9A;SO-8;PD 2.5W;VGS +/-20V
Single N-Channel 40 V 21 mOhm 23 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 40V 9A 8-Pin SOIC T/R / MOSFET N-CH 40V 9A 8-SOIC
Power MOSFET, N Channel, 40 V, 9 A, 0.017 ohm, SOIC, Surface Mount
MOSFET, N-CH, 40V, 9A, SOIC-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 9A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.012ohm; Rds(; Available until stocks are exhausted Alternative available
Power Field-Effect Transistor, 9A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.
Mosfet, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Power Dissipation:2.5W Rohs Compliant: Yes |Infineon Technologies IRF7469TRPBF.