공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-06-09
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
설명
유통업체에서 제공한 Infineon IRF7422D2TRPBF에 대한 설명입니다.
-20V FETKY - MOSFET AND SCHOTTKY DIODE IN A SO-8 PACKAGE | Infineon IRF7422D2TRPBF
Trans MOSFET P-CH 20V 4.3A 8-Pin SOIC T/R
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-4.3A; On Resistance, Rds(on):90mohm; Rds(on) Test Voltage, Vgs:-4.5V; Leaded Process Compatible:Yes RoHS Compliant: Yes
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSO
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.3 A
Current Rating-4.3 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time33 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance610 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max90 mΩ
Resistance90 mΩ
Rise Time26 ns
Turn-Off Delay Time26 ns
Turn-On Delay Time8.1 ns
Voltage Rating (DC)-20 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm