공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusObsolete (Last Updated: 3 weeks ago)
설명
유통업체에서 제공한 Infineon IRF7301에 대한 설명입니다.
Transistor MOSFET Array Dual N-Channel 20V 5.2A 8-Pin SOIC
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
2W 12V 700mV(Min) 20nC(Max) @ 4.5V 2individualNChannel 20V 50mΩ@ 4.5V 5.2A 660pF@ 15V SOP SMD mount 1.5mm(height)
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:5.2A; On Resistance, Rds(on):50mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:8-SOIC ;RoHS Compliant: No
제조업체 별칭
Infineon에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Infineon는 다음 이름으로도 알려져 있습니다:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.3 A
Current Rating5.2 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vds)20 V
Fall Time51 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation1.4 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Elements2
PackagingBulk
Rise Time42 ns
Turn-Off Delay Time32 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)20 V